Typical Characteristics

0

2

4

6

8

10

01234

Qg, GATE CHARGE (nC)

I

D = -1.5A

VDS = -5V

-10V

-15V

0

50

100

150

200

250

0

5

10

15

20

25

30

-VDS, DRAIN TO SOURCE VOLTAGE (V)

C

ISS

C

OSS

C

RSS

f = 1 MHz

V

GS = 0 V

Figure 7. Gate Charge Characteristics.

Figure 8. Capacitance Characteristics.

0.01

0.1

1

10

0.1

1

10

100

-VDS, DRAIN-SOURCE VOLTAGE (V)

DC

10s

1s

100ms

R

DS(ON) LIMIT

V

GS = -10V

SINGLE PULSE

RθJA = 270

oC/W

T

A = 25

oC

10ms

1ms

0

5

10

15

20

0.001

0.01

0.1

1

10

100

1000

t1, TIME (sec)

SINGLE PULSE

RθJA = 270°C/W

T

A = 25°C

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum

Power Dissipation.

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

10

100

1000

t

1, TIME (sec)

RθJA(t) = r(t) + RθJA

RθJA = 270 °C/W

TJ - TA = P * RθJA(t)

Duty Cycle, D = t1 / t2

P(pk)

t1

t2

SINGLE PULSE

0.01

0.02

0.05

0.1

0.2

D = 0.5

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b.

Transient thermal response will change depending on the circuit board design.

Rev:2023A2

4

FDN358

P−CHANNEL MOSFET