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NX8341 Fiches technique(PDF) 12 Page - California Eastern Labs

No de pièce NX8341
Description  1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
PDF  13 Pages
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Fabricant  CEL [California Eastern Labs]
Site Internet  http://www.cel.com
Logo CEL - California Eastern Labs

NX8341 Fiches technique(HTML) 12 Page - California Eastern Labs

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NX8341 Series
ELECTRO-OPTICAL CHARACTERISTICS (TC =
−5 to +85°C, BOL, unless otherwise specified)
Parameter
Symbol
Conditions
MIN.
TYP.
MAX.
Unit
Mean Optical Output Power
Pf
−2
dBm
Peak Emission Wavelength
λp
CW, Pf =
−2 dBm
1 290
1 330
nm
Side Mode Suppression Ratio
SMSR
CW, Pf =
−2 dBm
30
dB
Threshold Current
Ith
CW, TC = 25
°C
8
20
mA
CW
2
40
Differential Efficiency
ηd
CW, Pf =
−2 dBm, TC = 25°C
0.02
0.025
0.04
W/A
CW, Pf =
−2 dBm
0.005
0.05
Operation Voltage
Vop
CW, Pf =
−2 dBm
2
V
Monitor Current
Im
Pf =
−2 dBm, VR = 1.5 V
*1
90
700
µA
Monitor Dark Current
ID
VR = 1.5 V, TC = 25
°C
5
nA
VR = 1.5 V
50
Rise Time
tr
20-80%
*1
30
50
ps
Fall Time
tf
20-80%
*1
40
50
ps
Extinction Ratio
Ex
10 GbE, 10 G FC
*1
4
5
dB
Tracking Error
*2
γ
−1.0
1.0
dB
Input Impedance
Zin
25
Ω
Connector Repeatability
CR
With master pigtail
−1.0
1.0
dB
<R>
*1 9.95/10.3/10.5 Gb/s, PRBS 2
31
−1, NRZ, Duty Cycle = 50%
*2 Tracking Error:
γ
0
Im
Im
TC = 25˚C
TC = –5 to +85˚C
Pf
(mW)
Pf
Pf @ 25˚C
(mA)
γ = 10 log
[dB]
Pf
Pf @ 25˚C
Data Sheet PL10525EJ02V0DS
12



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