BFR182 datasheet(1/3 Pages) ISC

No de pièce	BFR182

Description	Low Noise Silicon Bipolar RF Transistor

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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Low Noise Silicon Bipolar RF Transistor

BFR182

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 12V(Min)

·

DC Current Gain-

: hFE= 70(Min)@ IC= 10mA

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

12

V

VEBO

Emitter-Base Voltage

2

V

IC

Collector Current-Continuous

35

mA

IB

Base Current

4

mA

PC

Collector Power Dissipation

250

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature

-65~150

℃

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