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BFR182 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited

No de pièce BFR182
Description  Low Noise Silicon Bipolar RF Transistor
PDF  3 Pages
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Fabricant  ISC [Inchange Semiconductor Company Limited]
Site Internet  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BFR182 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited

  BFR182 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BFR182 Datasheet HTML 2Page - Inchange Semiconductor Company Limited BFR182 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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Low Noise Silicon Bipolar RF Transistor
BFR182
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO
Collector-Emitter Sustaining Voltage IC=1mA ; IB=0
12
--
--
V
ICES
Collector-emitter cutoff current
VCE= 20V; VBE=0
--
--
5.0
mA
ICBO
Collector-base cutoff current
VCB= 10V; IE=0
--
--
1.0
mA
IEBO
Emitter-base cutoff current
VEB= 1V; IC=0
--
--
0.5
mA
hFE-1
DC Current Gain
IC= 10mA ; VCE= 8V
70
--
140
fT
Transition frequency
IC = 15mA, VCE = 8 V,
f = 500 MHz
6
8
--
GHz
Ccb
Collector-base capacitance
VCB = 10V, f = 1MHz, VBE = 0,
emitter grounded
--
0.32
0.5
pF
Cce
Collector emitter capacitance
VCE = 10V, f = 1MHz, VBE = 0,
base grounded
--
0.2
--
Ceb
Emitter-base capacitance
VEB = 0.5 V, f = 1MHz, VCB = 0,
collector grounded
--
0.8
--
NFmin
Minimum noise figure
IC=3mA, VCE=8V, ZS = ZSopt,
f = 900 MHz
--
0.9
dB
IC=3mA, VCE=8V, ZS = ZSopt,
f = 1.8GHz
--
1.3
|S21e|2
Transducer gain
IC= 10mA, VCE = 8V, ZS = ZL =
50 Ω,f = 900 MHz
--
15
dB
IC=10mA, VCE = 8V, ZS = ZL =
50 Ω,f = 1.8 GHz
--
9.5



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