2SC2551 datasheet(1/3 Pages) ISC

No de pièce	2SC2551

Description	isc Silicon NPN Power Transistor

PDF	3 Pages

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Fabricant	ISC [Inchange Semiconductor Company Limited]

Site Internet	http://www.iscsemi.cn

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2SC2551

isc Silicon NPN Power Transistor

www.iscsemi.com

1

DESCRIPTION

·

Collector-Emitter Breakdown Voltage

-V(BR)CEO=300V(Min)

·

Collector-Emitter Saturation Voltage

-VCE(sat)= 0.5V(Max) @IC= 20mA

APPLICATIONS

·

Designed for power amplifier,high speed switching and

regulated power supply applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

100

mA

PC

Collector Power Dissipation

TC=25℃

400

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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