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2SC2551 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2551 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() 2SC2551 isc Silicon NPN Power Transistor www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CBO Collector-base breakdown voltage IC= 100uA, IE= 0 300 -- V V(BR)CEO Collector-emitter breakdown voltage IC= 1mA, IB= 0 300 V(BR)EBO Emitter-base breakdown voltage IE= 100uA, IC= 0 6 VEB(sat) Base-Emitter Saturation Voltage IC= 20mA, IB= 2mA -- -- 1.2 V VCE(sat) Collector-Emitter Saturation Voltage IC= 20mA, IB= 2mA -- -- 0.5 V ICBO Collector Cutoff Current VCB= 300V; IE= 0 -- -- 0.1 uA IEBO Emitter Cutoff Current VEB = 6V; IC= 0 -- -- 0.1 uA hFE DC Current Gain IC= 20mA; VCE= 10V 30 -- 150 hFE DC Current Gain IC= 1mA; VCE=10V 20 -- -- fT Current-Gain—Bandwidth Product IC= 20mA ; VCE=10V -- 80 -- MHz hFE1 Classifications R O 30-90 50-150 |
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