650V 6A SiC Schottky Diode – SiS650S06AS

Silicon Carbide Schottky Barrier Rectifier diode in bare die form



Capable of high temperature operation >= 175°C



High Frequency Operation



High Surge Current Capability



No Reverse Recovery / No Forward Recovery



Positive Temperature Coefficient

Rev 1.0

30/10/23

Features:

Die Dimensions in µm (mils)

900 (35)

1550 (61)

ANODE



“H” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class H LAT



“K” - MIL-STD-750 /2073 Visual Inspection

+ MIL-PRF-38534 Class K LAT

LAT = Lot Acceptance Test.

For further information on LAT process flows see below.



No suffix - MIL-STD-750 /2073 Visual Inspection

The following part suffixes apply:

FIGURE 6. Non-repetitive Peak Forward Surg

Versus Pulse Duration

Ordering Information

www.siliconsupplies.com\quality\bare-die-lot-qualification

CHIP BACKSIDE IS CATHODE

1550 x 1550

61 x 61

Die Size (Unsawn)

µm

mils

Anode Pad Size

900 x 900

35 x 35

µm

mils

Die Thickness

350 (±20)

13.78 (0.79)

µm

mils

Top Metal Composition

Al 4µm

Supply Formats:

Mechanical Specification



Default – Die in Waffle Pack (400 per tray capacity)



Sawn Wafer on Tape – By specific request



Unsawn Wafer – By specific request



With additional electrical selection – By specific request

Back Metal Composition

Ag 0.4µm

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