NB650/NB650H

– 6A, 28V, FAST-TRANSIENT, SYNCHRONOUS STEP-DOWN CONVERTERS

NB650/NB650H Rev. 1.13

www.MonolithicPower.com

3

10/7/2019

MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited.

Preliminary Specifications Subject to Change

© 2019 MPS. All Rights Reserved.

ELECTRICAL CHARACTERISTICS

VIN = 12V, TJ = +25°C, unless otherwise noted.

Parameters

Symbol

Condition

Min

Typ

Max

Units

Input Supply Current (Shutdown)

IIN

VEN = 0V

0

μA

Input Supply Current (Quiescent)

IIN

VEN = 2V, VFB =0.65V

400

μA

Switch Leakage

SWLKG

VEN = 0V, VSW = 0V or 12V

0

1

μA

Current Limit

ILIMIT

tON>200ns

8

10

A

One-Shot On Time

tON

RFREQ=200k

Ω, VOUT=1.2V

200

ns

Minimum Off Time

tOFF

RFREQ

=200kΩ

100

ns

Fold-back Off Time(5)

tFB

ILIM=1

1.2

μs

OCP hold-off time(5)

tOC

ILIM=1

50

μs

Feedback Voltage

VFB

594

600

606

mV

Feedback Current

IFB

VFB = 600mV

10

100

nA

Soft Start Charging Current

ISS

VSS=0V

10

μA

Soft Stop Charging Current

ISS

VSS=0.6V

10

μA

EN Input Low Voltage

VILEN

0.4

V

EN Input High Voltage

VIHEN

2

V

EN Input Current

IEN

VEN = 2V

1.5

μA

VEN = 0V

0

OVP Feedback Threshold

VFB-OV

0.8

V

UVP Feedback Threshold(5)

VFB-UV

0.4

V

VID Inputs Low Voltage

VILVID

0.4

V

VID Inputs High Voltage

VIHVID

2

V

VID Inputs Current

IVID

0

μA

Equivalent FB Slew Rate During VID

On-The-Fly(5)

SRFB

±20

mV/

μs

VID Switch On Resistance(5)

VIDRDS-ON

100

Ω

Power Good Rising Threshold

PGVth-Hi

0.9

VFB

Power Good Falling Threshold

PGVth-Lo

0.85

VFB

Power Good Delay

PGTd

0.5

ms

Power Good Sink Current Capability

VPG

Sink 4mA

0.4

V

Power Good Leakage Current

IPG_LEAK

VPG = 3.3V

10

nA

Standby Mode Delay Time(5)

tSTANDBY

12

μs

VIN Under Voltage Lockout Threshold

Rising

INUVVth

4

V

VIN Under Voltage Lockout Threshold

Hysteresis

INUVHYS

800

mV

Thermal Shutdown(5)

TSD

150

°C

Note:

5) Not tested. Not guaranteed.