BUL3N7 datasheet(3/10 Pages) STMICROELECTRONICS

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BUL3N7

2 Electrical Characteristics

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Electrical Characteristics

Table 3.

Electrical Characteristics (TCASE = 25°C; unless otherwise specified)

Note: 1 Pulsed duration = 300

µs, duty cycle ≤1.5%.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(VBE = 0)

VCE = 700 V

VCE = 700 V__ __TC = 125°C

0.1

0.5

V(BR)EBO Emitter-Base Breakdown Voltage

(IC = 0)

IE = 10 mA

VCEO(sus)

Note: 1

Collector-Emitter

Sustaining Voltage (IB = 0)

IC = 100 mA

400

VCE(sat)

Note: 1

Collector-Emitter Saturation

Voltage

IC = 0.7 A __ _ IB = 0.1A

IC = 1 A

__ _ IB = 0.2 A

0.5

VBE(sat)

Note: 1

Base-Emitter Saturation Voltage

IC = 0.5A ____ IB = 0.1 A

IC = 1A _____ IB = 0.2 A

IC = 2A _____ IB = 0.4 A

1.1

1.2

1.3

hFE

DC Current Gain

IC = 10 mA _ VCE = 5 V

IC = 0.7A ____ VCE = 5 V

IC = 2A_

VCE = 5 V

RESISTIVE LOAD

Rise Time

Storage Time

Fall Time

IC = 0.7 A ___ VCC = 250 V

IB1 = 0.14 A __ IB2 = -0.14 A

Tp = 30 µs

2.4

100

µs

INDUCTIVE LOAD

Storage Time

Fall Time

IC = 1 A ____

IB1 = 0.2 A

VBE(off) = -5 V

Rbb = 0 Ω

L = 1 mH

Vclamp = 200 V

450

120

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