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BUL3N7 Fiches technique(PDF) 2 Page - STMicroelectronics |
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BUL3N7 Fiches technique(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() 1 Absolute Maximum Ratings BUL3N7 2/10 1 Absolute Maximum Ratings Table 1. Absolute Maximum Rating Table 2. Thermal Data Symbol Parameter Value Unit VCES Collector-Emitter Voltage (VBE = 0) 700 V VCEO Collector-Emitter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC = 0, IB = -0.75 A, tp < 100ms, Tj < 150°C) V(BR)EBO V IC Collector Current 3 A ICM Collector Peak Current (tP < 5ms) 6A IB Base Current 1.5 A IBM Base Peak Current (tP < 5ms) 3A PTOT Total dissipation at Tc = 25°C 60 W Tstg Storage Temperature -65 to 150 °C TJ Max. Operating Junction Temperature 150 °C Symbol Parameter Value Unit RthJ-case RthJ-amb Thermal Resistance Junction-Case_______________Max Thermal Resistance Junction-Ambient ______ ______Max 2.08 62.5 °C/W °C/W |
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