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STV223XD Fiches technique(PDF) 29 Page - STMicroelectronics |
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STV223XD Fiches technique(HTML) 29 Page - STMicroelectronics |
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29 / 76 page ![]() STV223XD/224XC - ELECTRICAL CHARACTERISTICS 29/76 HALF CONTRAST INPUT (TQFP64) FBOSD/HC INPUTS (SDIP56) EXTERNAL RGB/YCrCb INPUTS EXTERNAL FAST BLANKING INPUT (See Note 8) Note 8: FBEXT input must be connected to ground if not used in the application. Symbol Parameter Test Conditions Min. Typ Max. Unit VTH_HC Half Contrast Threshold Voltage 0.5 0.7 0.85 V tsWI_HC Half Contrast Delay 20 ns CTR_HC Contrast Attenuation when half con- trast active At Max. Contrast 6 dB I_HC Leakage Current 0V at Pin HC 10 µA Symbol Parameter Test Conditions Min. Typ Max. Unit VTHFB1A OSD Insertion Threshold Voltage Half Contrast disable Register 08hex d6 = 0 0.5 0.7 0.85 V VTHFB1B OSD Insertion Threshold Voltage Half Contrast enable Register 08hex d6 = 1 1.5 1.9 2.3 V VTH-HC Half Contrast Threshold Voltage Half Contrast enable Register 08hex d6 = 1 0.5 0.7 0.85 V VTHFB2 Blanking Threshold Voltage, Oversize Blanking active Register 08hex, d7 = 1 3.2 4 4.8 V tSWI1 Insertion Switching Delay 20 40 ns tSWI2 Blanking Switching Delay From FBOSD = 4V to starting of blanking falling edge at R,G,B out- puts 100 ns IFB Input current 0V at Pin FBOSD 10 µA Symbol Parameter Test Conditions Min. Typ Max. Unit VCLAMP Clamp Level Max. Contrast 3.5 V VRGB RGB Input Voltage 0.7 1 VPP VYCrCb YCrCb Input Voltage 100% color bar register 0Ahex d7d6 = 11 Y Cr Cb 1 0.7 0.7 VPP CRGB RGB Gain Max. Contrast, Max. Drive 4.28 - Dblack Difference of black level of internal and external signals at the RGB out- puts OSD signal versus internal signal 50 mV IRGB Clamping Current 60 100 140 µA Crosstalk Deletion of non-selected RGB source From 0 to 5 MHz 50 dB Symbol Parameter Test Conditions Min. Typ Max. Unit VTHFB Insertion Threshold Voltage 0.5 0.7 0.85 V tSWI Insertion Switching Delay 20 40 ns IFB Input Current 0V at Pin FBEXT 10 µA VMAX Max. voltage allowed at FBEXT input 5 V |
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