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BFQ68 Fiches technique(PDF) 3 Page - NXP Semiconductors |
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BFQ68 Fiches technique(HTML) 3 Page - NXP Semiconductors |
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3 / 10 page ![]() September 1995 3 Philips Semiconductors Product specification NPN 4 GHz wideband transistor BFQ68 LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). THERMAL RESISTANCE SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 25 V VCEO collector-emitter voltage open base − 18 V VEBO emitter-base voltage open collector − 2V IC DC collector current − 300 mA Ptot total power dissipation up to Tc =110 °C − 4.5 W Tstg storage temperature −65 150 °C Tj junction temperature − 200 °C SYMBOL PARAMETER THERMAL RESISTANCE Rth j-c thermal resistance from junction to case 20 K/W |
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