BFQ68 datasheet(2/10 Pages) PHILIPS

2 / 10 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFQ68

DESCRIPTION

NPN transistor mounted in a four-lead

dual-emitter SOT122A envelope with

a ceramic cap. All leads are isolated

from the stud. Diffused

emitter-ballasting resistors and the

application of gold sandwich

metallization ensure an optimum

temperature profile and excellent

reliability properties. It features very

high output voltage capabilities.

It is primarily intended for final stages

in MATV system amplifiers, and is

also suitable for use in low power

band IV and V equipment.

PINNING

DESCRIPTION

collector

emitter

base

emitter

Fig.1 SOT122A.

fpage

Top view

MBK187

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCEO

collector-emitter voltage

open base

−

collector current

−

300

Ptot

total power dissipation

up to Tc =110 °C

−

4.5

transition frequency

IC = 240 mA; VCE = 15 V; f = 500 MHz;

Tj =25 °C

−

GHz

output voltage

Ic = 240 mA; VCE = 15 V;

dim = −60 dB; RL =75 Ω;

f(p+q−r) = 793.25 MHz; Tamb =25 °C

1.6

−

PL1

output power at 1 dB gain

compression

Ic = 240 mA; VCE = 15 V; RL =75 Ω;

f = 800 MHz; Tamb =25 °C

−

dBm

ITO

third order intercept point

Ic = 240 mA; VCE = 15 V; RL =75 Ω;

f = 800 MHz; Tamb =25 °C

−

dBm

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All

persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

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