BFE520 datasheet(4/8 Pages) PHILIPS

4 / 8 page

1996 Oct 08

Philips Semiconductors

Product speciﬁcation

NPN wideband differential transistor

BFE520

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

Note

1. Maximum gain of the differential amplifier is higher because of internal emitter connection (see Fig.2).

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

DC characteristics of any single transistor

V(BR)CBO

collector-base breakdown voltage

IC = 2.5 µA; IE =0

−−

V(BR)CEO

collector-emitter breakdown voltage IC =10 µA; IB =0

−−

V(BR)EBO

emitter-base breakdown voltage

IE = 2.5 µA; IC = 0

2.5

−−

ICBO

collector-base leakage current

IE = 0; VCB =6V

−−

hFE

DC current gain

IC = 20 mA; VCE = 6 V

120

250

DC characteristics of the dual transistor

∆hFE

ratio of highest and lowest DC

current gain

IC1 =IC2 =20mA;

VCE1 =VCE2 =6V

1.2

−

∆V

BEO

difference between highest and

lowest base-emitter voltage

(offset voltage)

IE1 =IE2 = 30 mA; Tamb =25 °C0

−

AC characteristics of any single transistor

transition frequency

IC = 20 mA; VCE =3V;

f = 1 GHz

−

GHz

collector capacitance

IE =ie = 0; VCB = 3 V; f = 1 MHz −

0.4

0.45

Cre

feedback capacitance

IC = 0; VCB =3V;f=1MHz

−

0.35

0.4

MSG/Gmax

maximum power gain; note 1

IC = 20 mA; VCE =3V;

f = 900 MHz; Tamb =25 °C

−

IC = 20 mA; VCE =3V;

f = 2 GHz; Tamb =25 °C

−

insertion power gain

IC = 20 mA; VCE =3V;

f = 900 MHz; Tamb =25 °C

−

noise ﬁgure

IC = 5 mA; VCE =3V;

f = 900 MHz;

ΓS = Γopt

−

1.1

1.6

IC = 5 mA; VCE =3V;

f = 2 GHz;

ΓS = Γopt

−

1.9

−

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