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BFE520 Fiches technique(PDF) 3 Page - NXP Semiconductors

No de pièce BFE520
Description  NPN wideband differential transistor
PDF  8 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFE520 Fiches technique(HTML) 3 Page - NXP Semiconductors

  BFE520 Datasheet HTML 1Page - NXP Semiconductors BFE520 Datasheet HTML 2Page - NXP Semiconductors BFE520 Datasheet HTML 3Page - NXP Semiconductors BFE520 Datasheet HTML 4Page - NXP Semiconductors BFE520 Datasheet HTML 5Page - NXP Semiconductors BFE520 Datasheet HTML 6Page - NXP Semiconductors BFE520 Datasheet HTML 7Page - NXP Semiconductors BFE520 Datasheet HTML 8Page - NXP Semiconductors  
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1996 Oct 08
3
Philips Semiconductors
Product specification
NPN wideband differential transistor
BFE520
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
THERMAL CHARACTERISTICS
Note to the Limiting values and Thermal characteristics
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Any single transistor
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
8V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
DC collector current
−
70
mA
Ptot
total power dissipation
up to Ts =118 °C; note 1
−
1W
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−
175
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction
to soldering point; note 1
single loaded
230
K/W
double loaded
115
K/W



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