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L6382DTR Fiches technique(PDF) 6 Page - STMicroelectronics

No de pièce L6382DTR
Description  Power management unit for microcontrolled ballast
PDF  14 Pages
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Fabricant  STMICROELECTRONICS [STMicroelectronics]
Site Internet  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6382DTR Fiches technique(HTML) 6 Page - STMicroelectronics

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Symbol
Pin
Parameter
Test condition
min.
typ
max
UNIT
Source Current
Capability
LSG
120
mA
HEG
70
PFG
250
TRISE
5, 9, 17
Rise time
Cload = 1nF
TBD
ns
TFALL
5, 9, 17
Fall time
Cload = 1nF
TBD
ns
TDELAY
Propagation delay (input
to output)
LSG; high to low and low to
high
300
ns
HEG; high to low and low to
high
200
ns
PFG; high to low
250
ns
PFG; low to high
200
ns
RB
Pull down Resistor
LSG
20
K
Ω
HEG
50
K
Ω
PFG
10
K
Ω
HSG DRIVER (VOLTAGES REFERRED TO OUT)
VOH(HS)
12
HIGH Output Voltage
IHSG = 10 mA
VOUT -
0.5
V
VOL(HS)
12
LOW Output Voltage
IHSG = 10 mA
0.5
V
12
Sink Current Capability
120
mA
12
Source Current
Capability
120
mA
TRISE
12
Rise time
Cload = 1nF
TBD
ns
TFALL
12
Fall time
Cload = 1nF
TBD
ns
TDELAY
12
Propagation delay (LGI to
LSG)
high to low and low to high
300
ns
RB
12
Pull down Resistor
to OUT
20
K
Ω
HIGH-SIDE FLOATING GATE-DRIVER SUPPLY
ILKBOOT
11
VBOOT
pin
leakage
current
VBOOT = 580V
5
µA
ILKOUT
13
OUT pin leakage current
VOUT = 562V
5
µA
RDS(on)
Synchronous bootstrap
diode on-resistance
VLVG = HIGH
100
Ω
Forward Voltage Drop
at 10 mA forward current
1.9
2.4
V
Forward Current
at 5V forward voltage drop
25
mA
Table 5. Electrical Characteristcs (continued)
Table 5. Electrical Characteristcs (continued)



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