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BAS416-Q Fiches technique(PDF) 1 Page - Nexperia B.V. All rights reserved

No de pièce BAS416-Q
Description  Low-leakage switching diode
PDF  9 Pages
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Fabricant  NEXPERIA [Nexperia B.V. All rights reserved]
Site Internet  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

BAS416-Q Fiches technique(HTML) 1 Page - Nexperia B.V. All rights reserved

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BAS416-Q
Low-leakage switching diode
18 April 2023
Product data sheet
1. General description
Epitaxial, medium-speed switching diode with a low-leakage current encapsulated in a small
SOD323 SMD plastic package.
2. Features and benefits
• Plastic SMD package
• Low leakage current: typ. 3 pA
• Switching time: typ. 0.8 us
• Continuous reverse voltage: max. 75 V
• Repetitive peak reverse voltage: max. 85 V
• Repetitive peak forward current: max. 500 mA
• Qualified according to AEC-Q101 and recommended for use in automotive applications
3. Applications
• Low-leakage current applications in surface mounted circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
IF
forward current
-
-
200
mA
VRRM
repetitive peak reverse
voltage
Tj = 25 °C
-
-
85
V
VF
forward voltage
IF = 50 mA; Tj = 25 °C
-
-
1.1
V
IR
reverse current
VR = 75 V; pulsed; Tj = 25 °C
-
0.003 5
nA
trr
reverse recovery time
IF = 10 mA; IR = 10 mA; RL = 100 Ω;
IR(meas) = 1 mA; Tj = 25 °C
-
0.8
3
µs
5. Pinning information
Table 2. Pinning information
Pin
Symbol
Description
Simplified outline
Graphic symbol
1
K
cathode
2
A
anode
2
1
SOD323
aaa-032142
K
A


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