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BAS416-Q Fiches technique(PDF) 4 Page - Nexperia B.V. All rights reserved

No de pièce BAS416-Q
Description  Low-leakage switching diode
PDF  9 Pages
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Fabricant  NEXPERIA [Nexperia B.V. All rights reserved]
Site Internet  https://www.nexperia.com/
Logo NEXPERIA - Nexperia B.V. All rights reserved

BAS416-Q Fiches technique(HTML) 4 Page - Nexperia B.V. All rights reserved

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Nexperia
BAS416-Q
Low-leakage switching diode
mbg704
10
1
102
IFSM
(A)
10-1
tp (µs)
1
104
103
10
102
Based on square wave currents.
Tj(init) = 25 °C
Fig. 3. Non-repetitive peak forward current as a
function of pulse duration; typical values
102
150
200
50
0
mlb754
100
10
1
10- 1
10- 2
10- 3
IR
(nA)
Tj (°C)
(1)
(2)
VR = 75 V
(1) Maximum values
(2) Typical values
Fig. 4. Reverse current as a function of junction
temperature
mbg526
0
10
20
15
5
VR (V)
2
0
1
Cd
(pF)
f = 1 MHz; Tamb = 25 °C
Fig. 5. Diode capacitance as a function of reverse voltage; typical values
BAS416-Q
All information provided in this document is subject to legal disclaimers.
© Nexperia B.V. 2023. All rights reserved
Product data sheet
18 April 2023
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