BAS321-Q datasheet(4/10 Pages) NEXPERIA

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BAS321-Q

General purpose diode

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

IF = 100 mA; Tj = 25 °C

forward voltage

IF = 200 mA; Tj = 25 °C

1.25

VR = 200 V; Tj = 25 °C

100

reverse current

VR = 200 V; Tj = 150 °C

100

µA

diode capacitance

VR = 0 V; f = 1 MHz; Tj = 25 °C

trr

reverse recovery time

IF = 30 mA; IR = 30 mA; RL = 100 Ω;

IR(meas) = 3 mA; Tj = 25 °C

mbk927

100

200

Tamb (°C)

(mA)

300

100

200

150

Device mounted on an FR4 PCB

Fig. 1. Maximum permissible continuous forward

current as a function of ambient temperature

600

(mA)

200

400

mbg384

VF (V)

(1)

(3)

(2)

(1) Tj = 150 °C; typical values

(2) Tj = 25 °C; typical values

(3) Tj = 25 °C; maximum values

Fig. 2. Forward current as a function of forward

voltage

mbg703

102

IFSM

(A)

10- 1

tp (µs)

104

103

102

Based on square wave currents

Tj = 25 °C prior to surge

Fig. 3. Maximum permissible non-repetitive peak

forward current as a function of pulse duration

mbg381

200

100

Tj (°C)

(µA)

10- 2

102

10- 1

(1)

(2)

(1) VR = VRmax; maximum values

(2) VR = VRmax; typical values

Fig. 4. Reverse current as a function of junction

temperature

BAS321-Q

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Product data sheet

2 June 2021

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