Nexperia

BAS321-Q

General purpose diode

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VRRM

repetitive peak reverse

voltage

-

250

V

VR

reverse voltage

-

200

V

IF

forward current

[1]

-

250

mA

tp = 10 ms; square wave; Tj(init) = 25 °C

-

1.7

A

tp = 1 µs; square wave; Tj(init) = 25 °C

-

9

A

IFSM

non-repetitive peak

forward current

tp = 100 µs; square wave; Tj(init) = 25 °C

-

3

A

IFRM

repetitive peak forward

current

tp ≤ 0.5 ms; δ ≤ 0.25

-

625

mA

Ptot

total power dissipation

Tamb = 25 °C

[1]

-

300

mW

Tj

junction temperature

-

150

°C

Tstg

storage temperature

-65

150

°C

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

9. Thermal characteristics

Table 6. Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

[1]

-

-

366

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

[2]

-

-

130

K/W

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint.

[2] Soldering point of cathode tab.

BAS321-Q

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© Nexperia B.V. 2021. All rights reserved

Product data sheet

2 June 2021

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