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BA482 Fiches technique(PDF) 2 Page - NXP Semiconductors

No de pièce BA482
Description  Band-switching diodes
PDF  5 Pages
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Fabricant  PHILIPS [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BA482 Fiches technique(HTML) 2 Page - NXP Semiconductors

  BA482 Datasheet HTML 1Page - NXP Semiconductors BA482 Datasheet HTML 2Page - NXP Semiconductors BA482 Datasheet HTML 3Page - NXP Semiconductors BA482 Datasheet HTML 4Page - NXP Semiconductors BA482 Datasheet HTML 5Page - NXP Semiconductors  
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1996 Apr 17
2
Philips Semiconductors
Product specification
Band-switching diodes
BA482; BA483; BA484
FEATURES
• Continuous reverse voltage:
max. 35 V
• Continuous forward current:
max. 100 mA
• Low diode capacitance:
max. 1.0 to 1.6 pF
• Low diode forward resistance:
max. 0.7 to 1.2
Ω.
APPLICATION
• VHF television tuners.
DESCRIPTION
Planar high performance band-switching diode in a hermetically sealed glass
SOD68 (DO-34) package.
Fig.1 Simplified outline (SOD68; DO-34) and symbol.
The diodes are type branded.
handbook, halfpage
MAM156
k
a
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VR
continuous reverse voltage
35
V
IF
continuous forward current
100
mA
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
150
°C
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VF
forward voltage
IF = 100 mA; see Fig.2
1.2
V
IR
reverse current
see Fig.3
VR = 20V
100
nA
VR = 20 V; Tamb =75 °C
1
µA
Cd
diode capacitance
f = 1 to 100 MHz; VR = 3 V; see Fig.4
BA482
0.8
1.2
pF
BA483
0.7
1.0
pF
BA484
1.0
1.6
pF
rD
diode forward resistance
IF = 3 mA; f = 200 MHz; see Fig.5
BA482
0.6
0.7
BA483
0.8
1.2
BA484
0.8
1.2



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