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2SD1691 Fiches technique(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1691 Fiches technique(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD1691 DESCRIPTION · High Collector Current -IC= 5A · Low Collector Saturation Voltage : VCE(sat)= 0.3V(Max.)@ IC= 2A · Complement to Type 2SB1151 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for use in DC-DC converter, or driver of solenoid or motor. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICP Collector Current-Pulse 6 A PC Collector Power Dissipation @ TC=25℃ 20 W Collector Power Dissipation @ Ta=25℃ 1.3 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Numéro de pièce similaire - 2SD1691 |
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Description similaire - 2SD1691 |
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