| Moteur de recherche de fiches techniques de composants électroniques |
|
2SD1691 Fiches technique(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD1691 Fiches technique(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon NPN Power Transistor 2SD1691 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A 0.3 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A 1.2 V ICBO Collector Cutoff Current VCB= 50V; IE= 0 10 μ A IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 μ A hFE-1 DC Current Gain IC= 0.1A; VCE= 1V 60 hFE-2 DC Current Gain IC= 2A; VCE= 1V 100 400 hFE-3 DC Current Gain IC= 5A; VCE= 1V 50 160 hFE-2 Classifications O Y G 100-200 160-320 200-400 PACKAGE OUTLINE Dimensions in mm (1mm = 0.0394“) |
|
|
Lien URL |
| ALLDATASHEET vous a-t-il été utile ? [ DONATE ] |
À propos de Alldatasheet | Publicité | Contactez-nous | Politique de confidentialité | Lien vers la fiche technique | Echange de liens | Fabricants All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |