STGD4M65DF2_V01 datasheet(8/20 Pages) STMICROELECTRONICS

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Figure 19. Short-circuit time and current vs. VGE

IGBT170320161118SCV

(µs)

V GE(V)

I sc

[A]

VGE ≥15 V, T

J ≤ 175 °C

Figure 20. Switching times vs. collector current

IGBT160320161149STC

10 2

10 1

10 0

(ns)

I C (A)

V CC = 400 V, V GE = 15 V, R G = 47 Ω,

T j = 175 °C

t f

t d(off)

t d(on)

t r

Figure 21. Switching times vs. gate resistance

IGBT160320161153STR

10 2

10 1

10 0

100

200

300

400

(ns)

R G (Ω)

V CC = 400 V, V GE = 15 V, I C = 4 A,

T j = 175 °C

t d(off)

t d(on)

t r

t f

Figure 22. Reverse recovery current vs. diode current

slope

IGBT170320161121RRC

150

300

450

600

750

Irrm

(A)

di/dt (A/µs)

VCC = 400 V, VGE = 15 V, IF = 4 A,

Tj = 175 °C

Figure 23. Reverse recovery time vs. diode current slope

IGBT170320161122RRT

440

380

320

260

200

150

300

450

600

750

t rr

(ns)

di/dt (A/µs)

V CC =400 V, V GE = 15 V, I F = 4 A,

T j = 175 °C

Figure 24. Reverse recovery charge vs. diode current

slope

IGBT170320161123RRQ

370

365

360

355

350

150

300

450

600

750

di/dt (A/µs)

Qrr

(nC)

VCC = 400 V, VGE = 15 V, IF = 4 A,

Tj = 175 °C

STGD4M65DF2

STGD4M65DF2 electrical characteristics (curves)

DS11397 - Rev 5

page 8/20

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