STGD4M65DF2_V01 datasheet(7/20 Pages) STMICROELECTRONICS

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Figure 13. Capacitance variations

IGBT160320161139CVR

10 2

10 1

10 0

10 -1

10 0

10 1

10 2

(pF)

V CE (V)

C ies

C oes

C res

f = 1 MHz

Figure 14. Gate charge vs. gate-emitter voltage

IGBT160320161140GCGE

V GE

(V)

Q g (nC)

V CC = 520 V, I C = 4 A, I G = 1 mA

Figure 15. Switching energy vs. collector current

IGBT160320161145SLC

0.4

0.3

0.2

0.1

(mJ)

I C (A)

V CC = 400 V, R G = 47 Ω,

V GE = 15 V,

T j = 175 °C

E tot

E off

E on

Figure 16. Switching energy vs. gate resistance

IGBT170320161117SLG

0.5

0.4

0.3

0.2

0.1

100

200

300

400

(mJ)

R G (Ω)

V CC =400 V, I C = 4 A, V GE = 15 V,

T j = 175 °C

E tot

E off

E on

Figure 17. Switching energy vs. temperature

IGBT170320161118SLT

0.24

0.18

0.12

0.06

100

150

(mJ)

T J (°C)

V CC = 400 V, I C = 4 A, R G = 47 Ω,

V GE = 15 V

E tot

E off

E on

Figure 18. Switching energy vs. collector emitter voltage

IGBT160320161148SLV

0.3

0.2

0.1

150

250

350

450

(mJ)

V CE (V)

I C = 4 A, R G = 47 Ω, V GE = 15 V,

T j = 175 °C

E tot

E off

E on

STGD4M65DF2

STGD4M65DF2 electrical characteristics (curves)

DS11397 - Rev 5

page 7/20

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