EM6607 datasheet(41/47 Pages) EMMICRO

41 / 47 page

EM6607

www.emmicroelectronic.com

Conditions: VDD=3.0V, T=25°C (note 5) (unless otherwise specified), VREG not shorted to VDD

Parameter

Conditions

Symb.

Min.

Typ.

(note 2)

Max.

Unit

ACTIVE Supply Current

+25°C (note 3)

IVDDa

1.8

3.0

μA

ACTIVE Supply Current

(in active mode)

(note 3) (note 4)

-20°C to +85°C

IVDDa

4.5

μA

STANDBY Supply Current

+25°C

IVDDh

0.5

1.0

μA

STANDBY Supply Current

(in Halt mode)

(note 4)

-20°C to +85°C

IVDDh

1.8

μA

SLEEP Supply Current

+25°C

IVDDs

0.1

0.4

μA

SLEEP Supply Current

(SLEEP =1)

(note 4)

-20°C to +85°C

IVDDs

1.2

μA

POR voltage

VPOR

0.7

1.0

RAM data retention

VRD

1.1

Regulated Voltage

-20°C to +85°C

VREG

1.10

1.90

Note 1

Because of the voltage regulator drop at low voltages VREG = VDD when VDD<1.8V

Note 2: For current measurement typical quartz described in Operating Conditions is used.

All I/O pins without internal Pull Up/Down are pulled to VDD externally.

Note 3: Test loop with successive writing and reading of two different addresses with an inverted

values (five instructions should be reserved for this measurement),

Note 4: NOT tested if delivered in chip form.

Note 5: Test conditions for ACTIVE and STANDBY Supply current mode are: QIN = external

square wave, from rail to rail of VREG (regulated voltage) with 100nF capacitor on VREG.

fQIN = 32kHz.

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