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MIC2133YML Fiches technique(PDF) 5 Page - Microchip Technology |
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MIC2133YML Fiches technique(HTML) 5 Page - Microchip Technology |
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5 / 50 page ![]() 2022 Microchip Technology Inc. and its subsidiaries DS20006653B-page 5 MIC2133 ELECTRICAL CHARACTERISTICS(1) Electrical Characteristics: VIN =12V; VOUT =5V; fSW = 500 kHz/phase; VBST – VSW =5V; TA = +25°C; unless noted. Boldface values indicate -40°C ≤ TJ ≤ +125°C. Parameters Symbol Min. Typ. Max. Units Conditions Power Supply Input Input Voltage Range VIN 8 — 75 V— Quiescent Supply Current IQ —5000 8000 µA VFBS = +1.5V Shutdown Current ISD —25 50 µA VEN = 0V VDD and EXTVDD VDD Voltage Range VDD 4.7 5.1 5.4 VVIN = 8V to 75V, IVDD = 20 mA (Note 5) VDD Undervoltage Lockout Upper Threshold VDDUV_R 3.7 4.2 4.5 V VDD rising VDD UVLO Hysteresis VDDUV_HYS — 600 — mV Hysteresis VDD Regulation ΔVDD —1 2.5 %VIN = 24V, IVDD from 1 mA to 40 mA (Note 5) VDD Regulator Dropout Voltage VDROP_VDD — 0.8 1.05 V VIN = 5.5V, IVDD = 25 mA EXTVDD Switchover Voltage VSO_EVDD 4.5 4.7 4.9 VVIN = 24V, EXTVDD rising, IVDD = 40 mA EXTVDD Switchover Voltage Hysteresis VSO_HYS — 250 — mV Hysteresis EXTVDD Dropout Voltage VDROP_EVDD — 250 — mV VEXTVDD = 5V, IVDD = 40 mA EXTVDD Leakage Current ILK_EVDD —0.1 — µA VEXTVDD = 14V, VEN = 0V Soft Start Soft Start Source Current ISS 0.8 1.2 1.7 µA — DC-DC Regulator Output Voltage Adjustable Range VOUT 0.6 — 28 V Note 2 Reference and Remote Sensing Amplifier Feedback Regulation Voltage VFBS-GFB 0.593 0.6 0.606 V Measured with EA in servo loop FBS Bias Current IFBS —2 — nA VFBS = +0.6V (Note 2) GFB Bias Current IGFB —12 — µA — Remote Sense Amplifier Gain GRSA —1.00 — V/V — Enable Enable Upper Threshold Voltage VEN_TH 1.05 1.2 1.36 V Enable Rising Enable Hysteresis VEN_HYS —65 — mV — Enable Bias Current IEN — 100 200 nA VEN = 12V Note 1: Specification for packaged product only. 2: Ensured by design and characterization. Not production tested. 3: Measured in Test mode. 4: The maximum duty cycle is limited by the fixed mandatory off-time of typically 360 ns. 5: Limited by maximum junction temperature TJ = +125°C. |
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