STGW60H65DFB-4 datasheet(3/15 Pages) STMICROELECTRONICS

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Electrical characteristics

TC = 25 °C unless otherwise specified

Table 3. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

VGE = 0 V, IC = 2 mA

650

VCE(sat)

Collector-emitter

saturation voltage

VGE = 15 V, IC = 60 A

1.6

2.0

VGE = 15 V, IC = 60 A,

TJ = 125 °C

1.75

VGE = 15 V, IC = 60 A,

TJ = 175 °C

1.85

Forward on-voltage

IF = 60 A

2.6

IF = 60 A, TJ = 125 °C

1.7

IF = 60 A, TJ = 175 °C

1.6

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

µA

IGES

Gate-emitter leakage

current

VCE = 0 V, VGE = ±20 V

±250

Table 4. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE= 25 V, f = 1 MHz, VGE = 0 V

7792

Coes

Output capacitance

262

Cres

Reverse transfer

capacitance

158

Total gate charge

VCC = 520 V, IC = 60 A, VGE = 0

to 15 V (see Figure 29. Gate

charge test circuit)

306

Qge

Gate-emitter charge

126

Qgc

Gate-collector charge

STGW60H65DFB-4

Electrical characteristics

DS11665 - Rev 3

page 3/15

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