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SDM4435 Fiches technique(PDF) 3 Page - SamHop Microelectronics Corp. |
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SDM4435 Fiches technique(HTML) 3 Page - SamHop Microelectronics Corp. |
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3 / 7 page ![]() S DM4435 Parameter S ymbol Condition Min Typ Max Unit E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS Diode Forward Voltage VSD VGS = 0V, Is =-1.7A -0.74 -1.2 V b Notes a.Surface Mounted on FR4 Board, t <=10sec. c.Guaranteed by design, not subject to production testing. b.Pulse Test:Pulse Width<=300us, Duty Cycle<= 2%. F igure 1. Output C haracteristics F igure 2. Transfer C haracteristics F igure 3. C apacitance -V DS , Drain-to S ource Voltage (V ) -V GS , G ate-to-S ource Voltage (V ) -V DS , Drain-to-S ource Voltage (V ) 10 8 6 4 2 0 0 2 4 6 8 10 12 3 F igure 4. On-R esistance Variation with Temperature T j, J unction T emperature ( C ) 0 5 10 15 20 25 30 C iss C oss 1400 1150 900 750 500 250 0 C rss 25 C 25 20 15 10 5 0 0 -55 C 125 C 1.8 1.6 1.2 0.8 1.4 1.0 0.6 0 25 75 125 -V G S =10,9,8,7,6,5V 50 -25 -55 100 V GS =-10V ID=-8A 0.4 2.4 2.0 1.6 1.2 1.8 -V G S =3V -V G S =4V |
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