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SDM4435 Fiches technique(PDF) 2 Page - SamHop Microelectronics Corp.

No de pièce SDM4435
Description  P-Channel E nhancement Mode MOSFET
PDF  7 Pages
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Fabricant  SAMHOP [SamHop Microelectronics Corp.]
Site Internet  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

SDM4435 Fiches technique(HTML) 2 Page - SamHop Microelectronics Corp.

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S DM4435
E LE CTR ICAL CHAR ACTE R IS TICS (TA 25 C unless otherwise noted)
=
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHAR ACTER ISTICS
Drain-Source Breakdown Voltage
BVDSS
=
VGS 0V, ID -250uA
=
-30
V
Zero Gate Voltage Drain Current
IDSS
VDS -24V, VGS 0V
=
=
-1
uA
Gate-Body Leakage
IGSS
VGS 25V, VDS 0V
=
=
100 nA
ON CHAR ACTER ISTICS b
Gate Threshold Voltage
VGS(th)
VDS VGS, ID = -250uA
=
-1
V
Drain-Source On-State R esistance
R DS(ON)
VGS -10V, ID -8.0A
15
20
VGS -4.5V, ID -5.0A
22
35
On-State Drain Current
ID(ON)
VDS = -5V, VGS = -10V
-20
A
S
Forward Transconductance
FS
g
VDS -15V, ID - 8.0A
DYNAMIC CHAR ACTER ISTICS
c
Input Capacitance
CISS
CRSS
COSS
Output Capacitance
R everse Transfer Capacitance
VDS =-15V, VGS = 0V
f =1.0MHZ
P
F
P
F
P
F
SWITCHING CHAR ACTER ISTICS
c
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
tD(ON)
tr
tD(OFF)
tf
VD = -15V,
ID = -1A,
VGEN = - 10V,
R GEN = 6 -ohm
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
Qgd
VDS =-15V, ID = -8A,
VGS =-10V
nC
nC
nC
C
Fall Time
=
=
=
=
=
=
5
2
m-ohm
m-ohm
nC
VDS=-15V, ID=-8A,VGS=-10V
VDS=-15V, ID=-8A,VGS=-4.5V
-1.6
-3
33.6
95.4
169
17.4
17.6
137
8.1
3.3
17.3
1199
362
6



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