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L99MOD53XP Fiches technique(PDF) 14 Page - STMicroelectronics |
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L99MOD53XP Fiches technique(HTML) 14 Page - STMicroelectronics |
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14 / 35 page ![]() Electrical specifications L99MOD53XP 14/35 DS12617 Rev 5 2.5 SPI - electrical characteristics VS = 8 to 16 V, VCC = 4.5 to 5.3 V, Tj = - 40 to 150°C, unless otherwise specified. The voltages are referred to GND and currents are assumed positive, when the current flows into the pin. frec1 Recovery frequency for OC recovery duty cycle bit=1 316 kHz dVOUT123/dt dVOUT67/dt Slew rate of OUT123 and OUT67 VS =13.5 V, Rload=(1) 0.1 0.4 0.9 V/µs dVOUT45/dt Slew rate of OUT4 and OUT5 VS =13.5 V, Rload=(1) 0.08 0.2 0.4 V/µs dVOUT8/dt Slew rate of OUT8 VS =13.5 V, Rload=(1) 0.08 0.2 0.4 V/µs 1. OUT1,2,3 32 Ω OUT4,5 4 Ω OUT6,7 16 Ω OUT6,7 high RDSon mode 63Ω OUT8 4 Ω 2. tCC ON is the switch On delay time td ON if complement in half bridge has to switch off. Table 11. OUT1 - OUT8 (continued) Symbol Parameter Test condition Min. Typ. Max. Unit Table 12. Delay time from standby to active mode Symbol Parameter Test condition Min. Typ. Max. Unit tset Delay time Switching from standby to active mode. Time until output drivers are enabled after CSN going 160 300 µs Table 13. Inputs: CSN, CLK, PWM1/2 and DI Symbol Parameter Test condition Min. Typ. Max. Unit VinL Input low level VCC = 5 V 1.5 2.0 V VinH Input high level VCC = 5 V 3.0 3.5 V VinHyst Input hysteresis VCC = 5 V 0.5 V ICSN in Pull up current at input CSN VCSN = 3.5 V VCC = 5 V -40 -20 -5 µA ICLK in Pull down current at input CLK VCLK = 1.5 V 10 25 50 µA IDI in Pull down current at input DI VDI = 1.5 V 10 25 50 µA IPWM1 in Pull down current at input PWM1 VPWM = 1.5 V 10 25 50 µA Cin(1) Input capacitance at input CSN, CLK, DI and PWM1/2 0 V < VCC < 5.3 V 10 15 pF 1. Value of input capacity is not measured in production test. Parameter guaranteed by design. Table 14. DI timing Symbol Parameter(1) Test condition Min. Typ. Max. Unit tCLK Clock period VCC = 5 V 1000 ns tCLKH Clock high time VCC = 5 V 400 ns |
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