STGO30H60DLLFBAG datasheet(2/15 Pages) STMICROELECTRONICS

No de pièce	STGO30H60DLLFBAG

Description	Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package

PDF	15 Pages

Scroll/Zoom	100%

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

Logo

2 / 15 page

Electrical ratings

Table 1. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VCES

Collector-emitter voltage (VGE = 0)

600

Continuous collector current at TC = 25 °C

Continuous collector current at TC = 100 °C

ICP(1)

Pulsed collector current

120

VGE

Gate-emitter voltage

±10

Continuous forward current at TC = 25 °C

Continuous forward current at TC = 100 °C

IFP(1)

Pulsed forward current

120

PTOT

Total power dissipation at TC = 25 °C

263

TSTG

Storage temperature range

-55 to 150

°C

Operating junction temperature range

-55 to 175

°C

1. tp<1 μs.

Table 2. Thermal data

Symbol

Parameter

Value

Unit

RthJC

Thermal resistance, junction-to-case IGBT

0.57

°C/W

Thermal resistance, junction-to-case diode

1.51

RthJA

Thermal resistance, junction-to-ambient

°C/W

STGO30H60DLLFBAG

Electrical ratings

DS12913 - Rev 4

page 2/15

STGO30H60DLLFBAG Fiches technique(PDF) 2 Page - STMicroelectronics

STGO30H60DLLFBAG Fiches technique(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Fiches technique Télécharger

Lien URL