STGO30H60DLLFBAG Fiches technique(PDF) - STMicroelectronics

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STGO30H60DLLFBAG Fiches technique (PDF) - STMicroelectronics

STGO30H60DLLFBAG Datasheet PDF - STMicroelectronics


No de pièce	STGO30H60DLLFBAG

Télécharger	STGO30H60DLLFBAG Télécharger

Taille du fichier	1487.47 Kbytes

Page	15 Pages

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

Logo

Description

Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package

STGO30H60DLLFBAG Datasheet (PDF)

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Télécharger Fiches technique

STGO30H60DLLFBAG Datasheet PDF - STMicroelectronics


No de pièce	STGO30H60DLLFBAG

Télécharger	STGO30H60DLLFBAG Click to download

Taille du fichier	1487.47 Kbytes

Page	15 Pages

Fabricant	STMICROELECTRONICS [STMicroelectronics]

Site Internet	http://www.st.com

Logo

Description	Automotive-grade trench gate field-stop, 600 V, 30 A, high-speed HB series IGBT in a TO‑LL package

STGO30H60DLLFBAG Fiches technique (HTML) - STMicroelectronics

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STGO30H60DLLFBAG Détails du produit

Features
• AEC-Q101 qualified
• Maximum junction temperature: TJ = 175 °C
• Logic level gate drive
• High-speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 30 A
• Low VF soft-recovery co-packaged diode
• Tight parameter distribution
• Safer paralleling
• Low thermal resistance

Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop
structure. The device is part of the new HB series of IGBTs, which represents
an optimum compromise between conduction and switching loss to maximize the
efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)
temperature coefficient and very tight parameter distribution result in safer paralleling
operation.

Applications
• Automotive injection

Numéro de pièce similaire - STGO30H60DLLFBAG

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Eravant	STG-06-S1	372Kb / 4P	D-Band Noise Figure and Gain Test Extenders Rev 1.7
Eravant	STG-08-S1	376Kb / 4P	F-Band Noise Figure and Gain Test Extenders Rev 1.7
WiTTRA Networks AB	STG-10	504Kb / 4P	WITTRA™ IOT OUT OF THE BOX ISS.1 23/03/2020
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Eravant	STG-15-S1	380Kb / 4P	V-Band Noise Figure and Gain Test Extenders Rev 1.55

Description similaire - STGO30H60DLLFBAG

Fabricant	No de pièce	Fiches technique	Description
STMicroelectronics	STGB30H60DF	1Mb / 24P	600 V, 30 A high speed trench gate field-stop IGBT 20-Mar-2013
	STGB30H60DFB	1Mb / 21P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	STGB30H60DLFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed
	STGFW30H65FB	1Mb / 20P	Trench gate field-stop IGBT, HB series 650 V, 30 A high speed 28-Jul-2015
	STGW30H60DFB	1Mb / 20P	Trench gate field-stop IGBT, HB series 600 V, 30 A high speed 04-Nov-2016
	STGW40H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed 18-Mar-2014
	STGW60H60DLFB	1Mb / 17P	Trench gate field-stop IGBT, HB series 600 V, 60 A high speed 24-Feb-2014
	STGB30H60DLLFBAG	1,009Kb / 17P	Automotive-grade trench gate field-stop IGBT, HB series 600 V, 30 A high speed 18-Oct-2016
	STGH30H65DFB-2AG	408Kb / 17P	Automotive-grade trench gate field-stop, 650 V, 30 A, high-speed HB series IGBT in an H2PAK-2 package 13-Apr-2022
	STGWA40H60DLFB	871Kb / 15P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed in a TO-247 long leads package 03-Mar-2017

À propos de STMicroelectronics

Stmicroelectronics est un fabricant multinational d'électronique et de semi-conducteurs basé à Genève, en Suisse.

La société propose une large gamme de produits, notamment des microcontrôleurs, des capteurs, des amplificateurs de puissance et des circuits intégrés pour diverses applications sur les marchés automobiles, industriels et consommateurs.

Fondée en 1987, Stmicroelectronics a des opérations dans plus de 100 pays et est l'une des plus grandes sociétés de semi-conducteurs au monde.

*Ces informations sont fournies à titre informatif uniquement, nous ne serons pas responsables des pertes ou dommages causés par les informations ci-dessus.

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