FAM65CR51AXZ2 datasheet(10/14 Pages) ONSEMI

No de pièce	FAM65CR51AXZ2

Description	Boost Converter Stage in APM16 Series for Multiphase and Semi-Bridgeless PFC with SiC Diodes

PDF	14 Pages

Scroll/Zoom	100%

Fabricant	ONSEMI [ON Semiconductor]

Site Internet	http://www.onsemi.com

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10 / 14 page

FAM65CR51AXZ1, FAM65CR51AXZ2

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TYPICAL CHARACTERISTICS − MOSFETs

1.0E+02

1.0E+03

1.0E+04

1.0E+05

0.000001

0.00001

0.0001

0.001

0.01

0.1

Figure 16. Gate Charge Characteristics

Figure 17. ON−Resistance Variation with Drain

Current and Gate Voltage

Qg, GATE CHARGE (nC)

ID, DRAIN CURRENT (A)

160

120

0.040

0.045

0.050

0.055

0.060

Figure 18. Safe Operating Area

Figure 19. Peak Current Capability

t, RECTANGULAR PULSE DURATION (s)

Figure 20. Peak Power

t, RECTANGULAR PULSE DURATION (sec)

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

RDS(on) Limit

Thermal Limit

Package Limit

1 ms

10 ms

100 ms

Single Pulse

Limited IDM 291 A

TC = 25°C

For temperatures above 25°C

Derate peak current as follows:

I + I25

150 * Tc

125

NOTE:

RqJC = 0.27°C/W

Duty Cycle: D = t1/t2

Peak TJ = PDM x ZqJC(t) + TC

VDD = 130 V

VDD = 400 V

TC = 25°C

VGS = 10 V

VGS = 20 V

10 ms

TC = 25°C

RqJC = 0.27°C/W

Single Pulse

0.1

100

1000

0.1

100

1000

100

1000

0.000001 0.00001 0.0001

0.001

0.01

0.1

VGS = 10 V

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