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STM8L051F3 Fiches technique(PDF) 52 Page - STMicroelectronics |
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STM8L051F3 Fiches technique(HTML) 52 Page - STMicroelectronics |
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52 / 96 page ![]() Electrical parameters STM8L051F3 52/96 DS9178 Rev 4 Figure 8. Typ. IDD(RUN) vs. VDD, fCPU = 16 MHz 1. Typical current consumption measured with code executed from RAM 4. Oscillator bypassed (HSEBYP = 1 in CLK_ECKCR). When configured for external crystal, the HSE consumption (IDD HSE) must be added. Refer to Table 28. 5. Tested in production. 6. The run from Flash consumption can be approximated with the linear formula: IDD(run_from_Flash) = Freq * 195 µA/MHz + 440 µA 7. Oscillator bypassed (LSEBYP = 1 in CLK_ECKCR). When configured for extenal crystal, the LSE consumption (IDD LSE) must be added. Refer to Table 29. 1.50 1.75 2.00 2.25 2.50 2.75 3.00 1.8 2.1 2.6 3.1 3.6 VDD [V] -40°C 25°C 85°C ai18213b |
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