MSCSM170TAM23CTPAG datasheet(3/17 Pages) MICROCHIP

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Electrical Specifications

This section provides the electrical specifications of the MSCSM170TAM23CTPAG device.

1.1

SiC MOSFET Characteristics (Per SiC MOSFET)

The following table lists the absolute maximum ratings per SiC MOSFET of the MSCSM170TAM23CTPAG device.

Table 1-1. Absolute Maximum Ratings

Symbol

Parameter

Maximum Ratings

Unit

VDSS

Drain-Source voltage

1700

Continuous drain current

TC = 25 °C

122

TC = 80 °C

IDM

Pulsed drain current

240

VGS

Gate-Source voltage

–10/23

RDS(on)

Drain-Source ON resistance

22.5

mΩ

Power dissipation

TC = 25 °C

588

The following table lists the electrical characteristics per SiC MOSFET of the MSCSM170TAM23CTPAG device.

Table 1-2. Electrical Characteristics

Symbol

Characteristic

Test Conditions

Min

Typ

Max

Unit

IDSS

Zero gate voltage

drain current

VGS = 0 V; VDS = 1700 V

—

200

µA

RDS(on)

Drain–Source on

resistance

VGS = 20 V

ID = 60 A

TJ = 25 °C

—

17.5

22.5

mΩ

TJ = 175 °C

—

VGS(th)

Gate threshold

voltage

VGS = VDS; ID = 5 mA

1.8

3.2

—

IGSS

Gate–Source

leakage current

VGS = 20 V; VDS = 0 V

—

200

MSCSM170TAM23CTPAG

Electrical Specifications

Datasheet

DS00003965A-page 3

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