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AFSC5G35E38T2 Fiches technique(PDF) 4 Page - NXP Semiconductors

No de pièce AFSC5G35E38T2
Description  Power Amplifier Module for LTE and 5G
PDF  16 Pages
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Fabricant  NXP [NXP Semiconductors]
Site Internet  http://www.nxp.com
Logo NXP - NXP Semiconductors

AFSC5G35E38T2 Fiches technique(HTML) 4 Page - NXP Semiconductors

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4
RF Device Data
NXP Semiconductors
AFSC5G35E38
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Gate--Bias Voltage Range
VG
–0.5 to +10
Vdc
Operating Voltage Range
VDD
24 to 31
Vdc
Storage Temperature Range
Tstg
–65 to +150
C
Case Operating Temperature
TC
125
C
Peak Input Power
(3500 MHz, Pulsed CW, 10 sec(on), 10% Duty Cycle)
Pin
25
dBm
Table 3. Lifetime
Characteristic
Symbol
Value
Unit
Mean Time to Failure
Case Temperature 125C, 7WAvg.,31Vdc
MTTF
>10
Years
Table 4. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JS--001--2017)
1A
Charge Device Model (per JS--002--2014)
C2a
Table 5. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
3
260
C



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