HSC285 datasheet(1/5 Pages) RENESAS

No de pièce	HSC285

Description	SILICON SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY DETECTION

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Fabricant	RENESAS [Renesas Technology Corp]

Site Internet	http://www.renesas.com

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1 / 5 page

Rev.1.00, Apr.16.2003, page 1 of 5

HSC285

Silicon Schottky Barrier Diode for High frequency detection

REJ03G0011-0100Z

Rev.1.00

Apr.16.2003

Features

• Low forward voltage, Low capacitance and High detection sensitivity.

• Ultra small Flat Package (UFP) is suitable for surface mount design.

Ordering Information

Type No.

Laser Mark

Package Code

HSC285

C4

UFP

Pin Arrangement

12

C4

Cathode mark

Mark

1. Cathode

2. Anode

Numéro de pièce similaire - HSC285

Fabricant	No de pièce	Fiches technique	Description
Renesas Technology Corp	HSC285	52Kb / 5P	Silicon Schottky Barrier Diode for Detector
Renesas Technology Corp	HSC285	52Kb / 5P	Silicon Schottky Barrier Diode for Detector

Fabricant	No de pièce	Fiches technique	Description
Hitachi Semiconductor	HSB0104YP	27Kb / 5P	Silicon Schottky Barrier Diode for High Speed Switching
KEC(Korea Electronics)	KDR701S	384Kb / 2P	SCHOTTKY BARRIER TYPE DIODE(FOR HIGH FREQUENCY RECTIFICATION)
Renesas Technology Corp	HSU226	44Kb / 5P	Silicon Schottky Barrier Diode for High Speed Switching
	HSB285S	48Kb / 5P	SILICON SCHOTTKY BARRIER DIODE FOR HIGH FREQUENCY DETECTION
	HSU285	40Kb / 5P	Silicon Schottky Barrier Diode for High frequency detection
Toshiba Semiconductor	JDH3D01FV	180Kb / 5P	Diode Silicon Epitaxial Schottky Barrier Type For wave detection
Toshiba Semiconductor	JDH3D01S	168Kb / 4P	Diode Silicon Epitaxial Schottky Barrier Type For wave detection
Hitachi Semiconductor	HRW26	20Kb / 2P	Silicon Schottky Barrier Diode for High Frequency Rectifying
Renesas Technology Corp	RKD702KL	66Kb / 5P	Silicon Schottky Barrier Diode for High Speed Switching
Leshan Radio Company	LRB551V-30T1G	62Kb / 3P	Schottky barrier diode High-frequency rectification