Electrical Characteristics @TA=25℃ unless otherwise noted

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Drain-Source Breakdown Voltage

μA

20

----V

Zero Gate Voltage Drain Current

--

--

1

μA

Gate Threshold Voltage

μA

0.4

--

1

V

Gate Leakage Current

8V, V

　

DS

=0V

--

--

10

　

μA

--

--

230

m

Ω

--

--

305

m

Ω

--

--

455

m

Ω

Diode Forward Voltage

--

--

1.2

V

Diode Forward Current *AC

--

--

0.58

A

Total Gate Charge

--

2

--

nC

Gate-Source Charge

--

0.3

--

nC

Gate-Drain Charge

--

0.3

--

nC

Turn-on Delay Time

--

1.2

--

ns

Turn-on Rise Time

--

25

--

ns

Turn-off Delay Time

--

14

--

ns

Turn-Off Fall Time

--

15

--

ns

Input Capacitance

--

43

--

pF

Output Capacitance

--

9

--

pF

Reverse Transfer Capacitance

--

6

--

pF

Note:

A: The value of R

θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper,

in a still air environment with TA=25°C. The value in any given application depends

on the user's specific board design.

B: Repetitive rating, pulse width limited by junction temperature.

C: The current rating is based on the t

≤ 10s junction to ambient thermal resistance rating.

f=1.0MHz

Drain-Source On-state Resistance

　

N-Ch MOSFET

Page 2

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Rev1.0 Jan.2021

WSD1614DN