WNSC401200CW datasheet(3/11 Pages) WEEN

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WeEn Semiconductors

WNSC401200CW

Silicon Carbide Diode

WNSC401200CW

Product data sheet

All information provided in this document is subject to legal disclaimers.

15 January 2020

3 / 11

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Values

Unit

VRRM

repetitive peak reverse

voltage

1200

VRWM

crest working reverse

voltage

1200

reverse voltage

1200

IO(AV)

average forward current

δ = 0.5; square-wave pulse; Tmb ≤ 110 °C;

both diodes conducting; Fig. 1; Fig. 2; Fig. 3

IFRM

repetitive peak forward

current

δ = 0.5; tp = 25 μs; Tmb ≤ 110 °C;

square-wave pulse; per diode

IFSM

non-repetitive peak

forward current

tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse;

per diode

200

tp = 10 μs; Tj(init) = 25 °C; square-wave pulse;

per diode

1200

I2t

I2t for fusing

sine-wave pulse; Tj(init) = 25 °C; tp = 10 ms

200

A2s

Tstg

storage temperature

-55 to 175

°C

junction temperature

175

°C

IF(AV) = IF(RMS) × √δ

Vo = 0.875 V; Rs = 0.0682 Ω

Fig. 1. Forward power dissipation as a function of

average forward current; square waveform;

maximum values; per diode

Fig. 2. Current derating as a function of mounting base

temperature; per diode

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