WNSC401200CW datasheet(1/11 Pages) WEEN

No de pièce	WNSC401200CW

Description	Silicon Carbide Diode

PDF	11 Pages

Scroll/Zoom	100%

Fabricant	WEEN [WeEn Semiconductors]

Site Internet	http://www.ween-semi.com

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WNSC401200CW

Silicon Carbide Diode

Rev.01 - 15 January 2020

Product data sheet

1. General description

Dual Silicon Carbide Schottky diode in a

3-lead TO247 plastic package, designed

for high frequency switched-mode power

supplies.

2. Features and benefits

3. Applications

• Power factor correction

• Telecom / Server SMPS

• UPS

• PV inverter

• PC Silverbox

• LED / OLED TV

• Motor Drives

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter

Conditions

Values

Unit

Absolute maximum rating

VRRM

repetitive peak reverse

voltage

1200

V

IO(AV)

average forward current δ = 0.5 ; square-wave pulse; Tmb ≤ 110 °C;

both diodes conducting; Fig. 1; Fig. 2; Fig. 3

40

A

Tj

junction temperature

175

°C

Symbol Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

VF

forward voltage

IF = 20 A; Tj = 25 °C; per diode; Fig. 5

-

1.52

1.75

V

IF = 20 A; Tj = 150 °C; per diode; Fig. 5

-

2.15

V

IF = 20 A; Tj = 175 °C; per diode; Fig. 5

-

2.25

V

Dynamic characteristics

Qr

recovered charge

IF = 20 A; dIF/dt = 500 A/μs; VR = 400 V;

Tj = 25 °C; per diode; Fig. 7

-

86

-

nC

• Highly stable switching performance

• High forward surge capability IFSM

• Extremely fast reverse recovery time

• Superior in efficiency to Silicon Diode alternatives

• Reduced losses in associated MOSFET

• Reduced EMI

• Reduced cooling requirements

• RoHS compliant

RoHS

halogen-Free

Lead-Free

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