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2SC5998 Fiches technique(PDF) 2 Page - Renesas Technology Corp

No de pièce 2SC5998
Description  Silicon NPN Epitaxial High Frequency Medium Power Amplifier
PDF  11 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5998 Fiches technique(HTML) 2 Page - Renesas Technology Corp

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2SC5998
Rev.1.01, Jan 27, 2006, page 2 of 10
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
DC current transfer ratio
hFE
110
150
190
VCE = 3 V, IC = 100 mA
Collector output capacitance
Cob
2.0
pF
VCB = 3 V, IE = 0, f = 1 MHz
Reverse Transfer Capacitance
Cre
0.95
1.5
pF
VCB = 3 V, f = 1 MHz,
Emitter grounded
Transition Frequency
fT
10.5
GHz
VCE = 3.6 V, IC = 100 mA,
f = 1 GHz
Maximum Available Gain
MAG
22
dB
VCE = 3.6 V, IC = 100 mA,
f = 0.5 GHz
Power Gain
PG
11
13
dB
VCE = 3.6 V, ICq = 20 mA,
f = 0.5 GHz, Pin = +16 dBm
1dB Compression Point at output
P1dB
28
dBm
VCE = 3.6 V, ICq = 20 mA,
f = 0.5 GHz
Power Added Efficiency
PAE
70
%
VCE = 3.6 V, ICq =20 mA,
f = 0.5 GHz, Pin = +16 dBm
Main Characteristics
500
400
300
200
100
0
0.2
0.4
0.6
0.8
1.0
VCE = 3 V
Base to Emitter Voltage VBE (V)
Typical Transfer Characteristics
Collector Current IC (mA)
DC Current Transfer Ratio vs.
Collector Current
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics
0
50
100
150
200
Collector Power Dissipation Curve
Ambient Temperature Ta (
°C)
1.0
0.8
0.6
0.4
0.2
500
400
300
200
100
12
3
4
5
0
3.0 mA
2.5 mA
2.0 mA
3.5 mA
4.0 mA
1.5 mA
1.0 mA
IB = 0.5 mA
100
0
1
10
1000
150
200
50
VCE = 3 V
100
*FR – 4 (25 x 30 x 1 mm)
on PCB



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