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2SC5998 Fiches technique(PDF) 4 Page - Renesas Technology Corp

No de pièce 2SC5998
Description  Silicon NPN Epitaxial High Frequency Medium Power Amplifier
PDF  11 Pages
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Fabricant  RENESAS [Renesas Technology Corp]
Site Internet  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5998 Fiches technique(HTML) 4 Page - Renesas Technology Corp

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2SC5998
Rev.1.01, Jan 27, 2006, page 4 of 10
15
5
0
0
5
10
15
20
25
30
35
40
10
20
25
30
Pin (dBm)
VCE = 3.6 V
Icq = 20 mA
f = 0.5 GHz
Pout
PG
0
5
10
15
20
25
30
35
40
0
5
10
15
20
25
30
Pin (dBm)
VCE = 4.5 V
Icq = 20 mA
f = 0.5 GHz
Pout
PG
0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
20
25
30
0
20
40
60
80
100
Ic op
Pin (dBm)
PAE
Pin vs. Pout, PG
Pin vs. Pout, PG
Operation Current, Power Added Efficiency
0
0.1
0.2
0.3
0.4
0.5
0.6
0
5
10
15
20
25
30
0
20
40
60
80
100
Ic op
Pin (dBm)
PAE
Operation Current, Power Added Efficiency
VCE = 4.5 V
Icq = 20 mA
f = 0.5 GHz
Pin (dBm)
-20
-10
0
10
20
30
40
-30
-20
-10
010
20
30
Harmonic Distortion
Pin (dBm)
-20
-10
0
10
20
30
40
-30
-20
-10
010
20
30
Harmonic Distortion
VCE = 4.5 V
Icq = 20 mA
f = 0.5 GHz
2nd HD
3rd HD
Fund
VCE = 3.6 V
Icq = 20 mA
f = 0.5 GHz
VCE = 3.6 V
Icq = 20 mA
f = 0.5 GHz
Fund
2nd HD
3rd HD



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