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LM61089B Fiches technique(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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LM61089B Fiches technique(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd |
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2 / 6 page ![]() ABSOLUTE MAXIMUM RATINGS (TA=25℃, RH=45%-75%, unless otherwise noted) Note1:5/310µs means current wave, and its rise time is 5µs, fall time is 310µs. 10/700µs means voltage wave, and its rise time is 10µs, fall time is 700µs. Note2:Initially the protector must be in thermal equilibrium with TJ = 25 °C. EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal conductivity test board (multi-layer) connected with 0.6 mm printed wiring track widths ELECTRICAL CHARACTERISTICS (TA=25℃) Parameter Symbol Value Unit Storage temperature range TSTG -40 to +150 ℃ Operating junction temperature TJ -40 to +150 ℃ Non-repetitive peak on-state pulse current 10/1000µs (Telcordia (Bellcore) GR-1089-CORE,Issue 2, February) ITSP 30 A 5/310µs (ITU-T K.20/21& K.45/44 open-circuit voltage 10/700µs) 40 1.2/50µs (Telcordia (Bellcore) GR-1089-CORE, Issue 2, February ) 100 Non-repetitive peak pulse voltage(10/700µs) VPP 2000 V Non repetitive surge peak on-state current (sinusoidal) 60Hz (Note 2)900s ITSM 0.5 A Maximum voltage LINE/GROUND VDRM -170 V Maximum voltage GATE/LINE VGKRM -167 V Symbol Parameter Test conditions Value Unit Min. Typ. Max. Parameters related to the diode VF Forward voltage IF=5A, tw=200μs - - 3 V VFRM Peak forward recovery voltage 2/10us,IF=100A,Rs=55Ω Di/dt=80A/us - - 10 V Parameters related to the protection thyristor IDRM Off-state current VDRM=-170V, VGK=0V - - -5 µA VBO Breakover voltage 10/700us,ITM=-100A, Rs=50Ω,VGG=100V, di/dt=-80A/μs - - -112 V IH Holding current IT=-1A, di/dt=1A/ms, VGG=-100V -150 - - mA Rev : www.leiditech.com 01.06.2018 2/6 LM61089B |
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