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LM61089B Fiches technique(PDF) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

No de pièce LM61089B
Description  Dual programmable transient suppressor
PDF  6 Pages
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Fabricant  LEIDITECH [Shanghai Leiditech Electronic Technology Co., Ltd]
Site Internet  http://www.leiditech.com
Logo LEIDITECH - Shanghai Leiditech Electronic Technology Co., Ltd

LM61089B Fiches technique(HTML) 2 Page - Shanghai Leiditech Electronic Technology Co., Ltd

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ABSOLUTE MAXIMUM RATINGS (TA=25℃, RH=45%-75%, unless otherwise noted)
Note1:5/310µs means current wave, and its rise time is 5µs, fall time is 310µs.
10/700µs means voltage wave, and its rise time is 10µs, fall time is 700µs.
Note2:Initially the protector must be in thermal equilibrium with TJ = 25 °C.
EIA/JESD51-2 environment and EIA/JESD51-7 high effective thermal
conductivity test board (multi-layer) connected with 0.6 mm printed
wiring track widths
ELECTRICAL CHARACTERISTICS (TA=25℃)
Parameter
Symbol
Value
Unit
Storage temperature range
TSTG
-40 to +150
Operating junction temperature
TJ
-40 to +150
Non-repetitive peak on-state pulse current
10/1000µs
(Telcordia (Bellcore) GR-1089-CORE,Issue 2,
February)
ITSP
30
A
5/310µs
(ITU-T K.20/21& K.45/44 open-circuit voltage
10/700µs)
40
1.2/50µs
(Telcordia (Bellcore) GR-1089-CORE, Issue
2, February )
100
Non-repetitive peak pulse voltage(10/700µs)
VPP
2000
V
Non repetitive surge peak on-state current
(sinusoidal) 60Hz (Note 2)900s
ITSM
0.5
A
Maximum voltage LINE/GROUND
VDRM
-170
V
Maximum voltage GATE/LINE
VGKRM
-167
V
Symbol
Parameter
Test conditions
Value
Unit
Min.
Typ. Max.
Parameters related to the diode
VF
Forward voltage
IF=5A, tw=200μs
-
-
3
V
VFRM
Peak forward
recovery voltage
2/10us,IF=100A,Rs=55Ω
Di/dt=80A/us
-
-
10
V
Parameters related to the protection thyristor
IDRM
Off-state current
VDRM=-170V, VGK=0V
-
-
-5
µA
VBO
Breakover voltage
10/700us,ITM=-100A,
Rs=50Ω,VGG=100V,
di/dt=-80A/μs
-
-
-112
V
IH
Holding current
IT=-1A, di/dt=1A/ms,
VGG=-100V
-150
-
-
mA
Rev :
www.leiditech.com
01.06.2018
2/6
LM61089B



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