RA4M3 datasheet(29/92 Pages) RENESAS

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– Ψjt : Thermal Resistance of “Junction”-to-“Top Center Case” (°C/W)

● Total power consumption = Voltage × (Leakage current + Dynamic current)

● Leakage current of IO = Σ (IOL × VOL) /Voltage + Σ (|IOH| × |VCC – VOH|) /Voltage

● Dynamic current of IO = Σ IO (Cin + Cload) × IO switching frequency × Voltage

– Cin: Input capacitance

– Cload: Output capacitance

Regarding θja and Ψjt, refer to Table 2.11.

Table 2.11

Thermal Resistance

Parameter

Package

Symbol

Value*1

Unit

Test conditions

Thermal

Resistance

64-pin LQFP (PLQP0064KB-C)

θja

38.0

°C/W

JESD 51-2 and 51-7

compliant

100-pin LQFP (PLQP0100KB-B)

35.0

144-pin LQFP (PLQP0144KA-B)

33.0

64-pin LQFP (PLQP0064KB-C)

Ψjt

0.80

°C/W

JESD 51-2 and 51-7

compliant

100-pin LQFP (PLQP0100KB-B)

0.76

144-pin LQFP (PLQP0144KA-B)

0.63

Note 1. The values are reference values when the 4-layer board is used. Thermal resistance depends on the number of layers or size of the

board. For details, refer to the JEDEC standards.

2.2.7.1

Calculation guide of ICCmax

Table 2.12 shows the power consumption of each unit.

Table 2.12

Power consumption of each unit (1 of 2)

Dynamic current/

Leakage current

MCU

Domain

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