AM29N323D datasheet(13/48 Pages) AMD

No de pièce	AM29N323D

Description	32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory

PDF	48 Pages

Scroll/Zoom	100%

Fabricant	AMD [Advanced Micro Devices]

Site Internet	http://www.amd.com

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13 / 48 page

Am29N323D

August 8, 2002

■ When WP# is at VIL, the two outermost sectors are

locked.

■ When VPP is at VIL, all sectors are locked.

The following hardware data protection measures pre-

vent accidental erasure or programming, which might

otherwise be caused by spurious system level signals

during VCC power-up and power-down transitions, or

from system noise.

Low VCC Write Inhibit

When VCC is less than VLKO, the device does not ac-

cept any write cycles. This protects data during VCC

power-up and power-down. The command register

and all internal program/erase circuits are disabled,

and the device resets to reading array data. Subse-

quent writes are ignored until VCC is greater than

VLKO. The system must provide the proper signals to

the control inputs to prevent unintentional writes when

VCC is greater than VLKO.

Write Pulse “Glitch” Protection

Noise pulses of less than 5 ns (typical) on OE#, CE#

or WE# do not initiate a write cycle.

Logical Inhibit

Write cycles are inhibited by holding any one of OE# =

VIL, CE# = VIH or WE# = VIH. To initiate a write cycle,

CE# and WE# must be a logical zero while OE# is a

logical one.

AM29N323D Fiches technique(PDF) 13 Page - Advanced Micro Devices