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AM29N323D Fiches technique(PDF) 32 Page - Advanced Micro Devices

No de pièce AM29N323D
Description  32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory
PDF  48 Pages
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Fabricant  AMD [Advanced Micro Devices]
Site Internet  http://www.amd.com
Logo AMD - Advanced Micro Devices

AM29N323D Fiches technique(HTML) 32 Page - Advanced Micro Devices

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August 8, 2002
Am29N323D
31
AC CHARACTERISTICS
Erase/Program Operations
Notes:
1. Not 100% tested.
2. See the “Erase and Programming Performance” section for more information.
3. Does not include the preprogramming time.
Parameter
Description
11A
Unit
JEDEC
Standard
tAVAV
tWC
Write Cycle Time (Note 1)
Min
110
ns
tAVWL
tAS
Address Setup Time
Min
5
ns
tWLAX
tAH
Address Hold Time
Min
7
ns
tAVDP
AVD# Low Time
Min
12
ns
tDVWH
tDS
Data Setup Time
Min
50
ns
tWHDX
tDH
Data Hold Time
Min
0
ns
tGHWL
tGHWL
Read Recovery Time Before Write
Typ
0
ns
tELWL
tCS
CE# Setup Time
Typ
0
ns
tWHEH
tCH
CE# Hold Time
Typ
0
ns
tWLWH
tWP/tWRL
Write Pulse Width
Typ
60
ns
tWHWL
tWPH
Write Pulse Width High
Typ
30
ns
tSR/W
Latency Between Read and Write Operations
Min
0
ns
tWHWH1
tWHWH1
Programming Operation (Note 2)
Typ
11.5
µs
tWHWH1
tWHWH1
Accelerated Programming Operation (Note 2)
Typ
4
µs
tWHWH2
tWHWH2
Sector Erase Operation (Notes 2, 3)
Typ
1.5
sec
tVPP
VPP Rise and Fall Time
Min
500
ns
tVPS
VPP Setup Time (During Accelerated Programming)
Min
1
µs
tVCS
VCC Setup Time
Min
50
µs



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