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WSF30P06 Fiches technique(PDF) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

No de pièce WSF30P06
Description  P-Ch MOSFET
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Fabricant  WIINSOK [Shenzhen Guan Hua Wei Ye Co., Ltd]
Site Internet  http://www.winsok.tw/index.html
Logo WIINSOK - Shenzhen Guan Hua Wei Ye Co., Ltd

WSF30P06 Fiches technique(HTML) 2 Page - Shenzhen Guan Hua Wei Ye Co., Ltd

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Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
BVDSS
Drain-Source Breakdown Voltage
VGS=0V , ID=-250uA
-60
---
---
V
△
BVDSS/△TJ BVDSS Temperature Coefficient
Reference to 25℃ , ID=-1mA
---
-0.012
---
V/℃
VGS=-10V , ID=-10A
---
38
RDS(ON)
Static Drain-Source On-Resistance
VGS=-4.5V , ID=-5A
---
50
62
mΩ
VGS(th)
Gate Threshold Voltage
-1.0
-1.65
-2.5
V
VGS=VDS , ID =-250uA
VDS=-32V , VGS=0V , TJ=25℃
---
---
1
IDSS
Drain-Source Leakage Current
VDS=-32V , VGS=0V , TJ=55℃
---
---
5
uA
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
---
±
100
nA
Qg
Total Gate Charge (-4.5V)
---
45
---
Qgs
Gate-Source Charge
---
8
---
Qgd
Gate-Drain Charge
---
10
---
nC
Td(on)
Turn-On Delay Time
---
13
---
Tr
Rise Time
---
15
---
Td(off)
Turn-Off Delay Time
---
37
---
Tf
Fall Time
---
15
---
ns
Ciss
Input Capacitance
---
2980
---
Coss
Output Capacitance
---
245
---
Crss
Reverse Transfer Capacitance
---
155
---
pF
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IS
Continuous Source Current
---
---
-23.5
A
VG=VD=0V , Force Current
VSD
Diode Forward Voltage
VGS=0V , IS=-1A , TJ=25℃
---
---
-1.2
V
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Diode Characteristics
WSF30P06
P-Ch MOSFET
Page 2
www.winsok.tw
Dec.2014
VGS=-10V, VDS=-30V, RL=1.5
Ω,
RGEN=3
Ω
VDS=-30V,VGS=0V, f=1.0MHz
VGS=-10V, VDS=-30V, ID=-20A
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given
application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C:
The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
48



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