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WSF30P06 Fiches technique(PDF) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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WSF30P06 Fiches technique(HTML) 1 Page - Shenzhen Guan Hua Wei Ye Co., Ltd |
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1 / 5 page ![]() Symbol Parameter Rating Units VDS Drain-Source Voltage -60 V VGS Gate-Source Voltage ± 20 V ID@TC=25℃ Continuous Drain Current -23.5 A ID@TC=70℃ Continuous Drain Current -18.7 A IDP Pulsed Drain Current -80 A PD@TC=25℃ Total Power Dissipation 30 W TJ/TSTG Operating/Storage Temperature Range -55 to 150 ℃ Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient --- 62 ℃ /W RθJC Thermal Resistance Junction-Case --- 4 ℃ /W BVDSS RDSON ID -60V 38mΩ -23.5A Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available General Description Features Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System CCFL Back-light Inverter Absolute Maximum Ratings Thermal Data TO -252 Pin Configuration Product Summery WSF30P06 P-Ch MOSFET Page 1 www.winsok.tw Dec.2014 The WSF30P06 is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The WSF30P06 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved. |
Numéro de pièce similaire - WSF30P06 |
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Description similaire - WSF30P06 |
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