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NPN
PNP
NPN
PNP
NPN
PNP
VCE(sat)-IB Characteristics (Typical)
VCE(sat)-IC Temperature Characteristics (Typical)
Safe Operating Area (SOA)
Characteristic curves
SMA6080
(Ta=25
°C)
NPN
PNP
Symbol
Specification
Unit
Conditions
Specification
Unit
Conditions
min
typ
max
min
typ
max
ICBO
10
µAVCB=60V
–10
µAVCB=–60V
IEBO
5mA
VEB=6V
–5mA
VEB=–6V
VCEO
60
V
IC=10mA
–60
V
IC=–10mA
hFE
2000
5000
12000
VCE=4V, IC=1A
2000
5000
12000
VCE=–4V, IC=–1A
VCE(sat)
1.1
1.5
V
–1.2
–1.5
V
VBE(sat)
1.8
2.2
V
–1.9
–2.2
V
VFEC
1.3
1.8
V
IFEC=1A
–1.3
–1.8
V
IFEC=–1A
ton
0.5
µsVCC 30V,
0.4
µsVCC –30V,
tstg
4.5
µsIC=1A,
1.0
µsIC=–1A,
tf
1.2
µsIB1=–IB2=2mA
0.4
µsIB1=–IB2=–2mA
fT
50
MHz
VCE=12V, IE=–0.1A
100
MHz
VCE=–12V, IE=0.1A
Cob
20
pF
VCB=10V, f=1MHz
30
pF
VCB=–10V, f=1MHz
IC=1A, IB=2mA
IC=–1A, IB=–2mA
Electrical characteristics
PT-Ta Characteristics
θ j-a-PW Characteristics
PNP
NPN
0.1
IB (mA)
5
1
0.5
0
2
1
3
(IC=1A)
Ta=125
°C
75
°C
25
°C
–30
°C
–0.1
IB (mA)
–5
–1
–0.5
0
–1
–3
–2
(IC=–1A)
Ta=125
°C
75
°C
25
°C
–30
°C
(IC/IB=1000)
3
2
0
0.2
0.5
1
IC (A)
1
4
(IC/IB=1000)
–3
–2
0
–0.2
–0.5
–1
IC (A)
–1
–4
75
°C
25°C
Ta=–30
°C
125°C
5
1
0.5
0.1
0.05
0.03
3
5
10
50
100
VCE (V)
1ms
10ms
200
Single Pulse
Without Heatsink
Ta=25
°C
–5
–1
–0.5
–0.1
–0.05
–0.03
–3
–5
–10
–50
–100
VCE (V)
100
µ
s
Single Pulse
Without Heatsink
Ta=25
°C
PW (mS)
0.5
100
1000
500
50
10
5
1
5
1
0.5
10
20
0.2
PW (mS)
0.5
100
1000
500
50
10
5
1
5
0.5
1
10
20
0.2
20
15
10
5
0
–40
0
50
100
150
Ta (
°C)
Without Heatsink
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